A Novel Approach to Reduce Sub Threshold Leakage in Deep Sub-Micron SRAM
نویسندگان
چکیده
This paper deals with design opportunities of Static Random Access Memory (SRAM) for low power consumption. Initially three major leakage current components are reviewed and then for a 6T SRAM cell, some of the leakage current reduction techniques are discussed. Finally double finger latch is analyzed and compared with single finger latch which shows reduction in sub threshold leakage current.
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